1. Utilize SIC MOSFET and SIC diodes, and realize some switchgear and conduction losses significantly lower than those of traditional silicon devices. In particular, under high-frequency and high-voltage conditions, its efficiency advantage is exceptionally pronounced, with an overall system efficiency easily reaching up to 96% - 98% or higher.               
2. The SIC device allows for an operating frequency ranging from tens to hundreds of kHz, representing 5- to 10-time increase over those traditional silicon-based IGBTs. A high-frequency operation has substantially reduced both size and weight of passive components and parts (Such as transformers, inductors and capacitors).             
3. The extremely fast switching speed brings about minimal switching noise and EMI. A higher disruptive field intensity allows for the application onto platforms with a higher voltage.